Infineon processes functional power devices on 300mm silicon-carbide wafers
Technology · First reported 9 Nov, 17:45 · Updated 18:31
Infineon says it has made functional power devices from 300mm silicon-carbide wafers at its Villach, Austria, fab, using existing silicon-manufacturing equipment. The company describes this as a feasibility milestone; it has not announced a production ramp schedule and says it will plan timing with customers and partners while continuing its 200mm roadmap.
- Infineon reports processing 300mm silicon-carbide wafers into functional power devices at its Villach fab, using existing silicon manufacturing equipment.
- The company says a 300mm wafer can yield 2.3 times as many chips as a 200mm wafer; it describes the achievement as demonstrating potential for future industrial-scale production.
- Infineon says it will determine technology and ramp timing with customers and partners while continuing its 200mm silicon-carbide manufacturing roadmap.
Summary written by Lux AI from 2 articles
Key facts
- Site
- Villach, Austria.
- Wafer size
- 300mm silicon carbide.
- Reported comparison
- 2.3 times more chips per wafer than 200mm wafers, according to Infineon.
- Next steps
- Plan technology and ramp timing with customers and partners; continue the 200mm silicon-carbide roadmap.
- Public display
- Infineon said it would present the wafer at electronica in Munich, from 10 to 13 November 2026.
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Background
- An earlier report said Infineon planned a €1.1 billion investment in Villach for gallium-nitride power chips on 300mm wafers. [59a7fbdc-cbeb-4e33-9d74-7c0564024b77]
- An earlier market report gave an indicative Infineon share price of €50.48 before the Xetra open on 27 October 2026, versus a previous close of €50.20. [12e4b6e3-5584-4b82-bb20-a931b3be7e73]
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